may 2007 - rev 02-may-07 velocium products 18 - 20 ghz hpa - aph478 21.0-24.0 ghz gaas mmic power amplifier page 1 of 7 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd mimix broadband?s two stage 21.0-24.0 ghz gaas mmic power amplifier is optimized for linear operation with a third order intercept point of +39.0 dbm. this mmic uses mimix broadband?s 0.15 m gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. absolute maximum ratings general description supply voltage (vd) supply current (id1,2) gate bias voltage input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +5.5 vdc 600,670 ma +0.3 vdc +15 dbm -65 to +165 o c -55 to mttf table mttf table (3) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 3 features chip device layout 3 excellent linear output amplifier stage 19.0 db small signal gain +30.0 dbm p1db compression point +39.0 dbm third order intercept (oip3) 100% on-wafer rf, dc and output power testing 100% visual inspection to mil-std-883 method 2010 frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) output power for 1 db compression (p1db) output third order intercept point (oip3) drain bias voltage (vd1,2) gate bias voltage (vg1,2) supply current (id) (vd=5.0v, vg=-0.3v typical) electrical characteristics (ambient temperature t = 25 o c) parameter units ghz db db db db db dbm dbm vdc vdc ma min. 21.0 - - - - - - - - -1.0 - typ. - 12.0 10.0 19.0 +/-0.5 - +30.0 +39.0 +5.0 -0.3 950 max. 24.0 - - - - - - - - 0.0 - (1) measured at +18 dbm per tone output carrier level across the full frequency band. (2) measured using constant current. 1,2 2
may 2007 - rev 02-may-07 velocium products 18 - 20 ghz hpa - aph478 power amplifier measurements page 2 of 7 21.0-24.0 ghz gaas mmic power amplifier measured performance characteristics (typical performance at 25c) vd1 = vd2 = 5.0v, id1 = 350 ma, id2 = 600ma 6 8 10 12 14 16 18 20 22 24 26 28 21 22 23 24 25 26 frequency (ghz) gain (db) 22 24 26 28 30 32 34 36 38 40 42 44 21 22 23 24 25 26 frequency (ghz) pout (dbm) p1db ip3 two tone test with 18 dbm / tone -45 -40 -35 -30 -25 -20 -15 -10 -5 0 21 22 23 24 25 26 frequency (ghz) input return loss (db) -30 -25 -20 -15 -10 -5 0 21 22 23 24 25 26 frequency (ghz) output return loss (db) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd
may 2007 - rev 02-may-07 velocium products 18 - 20 ghz hpa - aph478 power amplifier measurements (cont.) page 3 of 7 21.0-24.0 ghz gaas mmic power amplifier measured performance characteristics (typical performance at 25c) vd1 = vd2 = 5.0v, id1 = 350 ma, id2 = 600ma 22 24 26 28 30 32 34 36 38 40 42 44 21 22 23 24 25 26 frequency (ghz) pout (dbm) p1db ip3 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 18 20 22 24 26 28 pout (dbm /tone) ip3 (dbm) 22 ghz 23 ghz two tone test with 18 dbm / tone (fixtured) (fixtured) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd
may 2007 - rev 02-may-07 velocium products 18 - 20 ghz hpa - aph478 page 4 of 7 s-parameters 21.0-24.0 ghz gaas mmic power amplifier measured performance characteristics (typical performance at 25c) vd1 = vd2 = 5.0v, id1 = 350 ma, id2 = 600ma freq ghz s11 mag s11 ang s21 mag s21 a ng s12 mag s12 a ng s22 mag s22 a ng 19 0.667 -145.777 2.284 -174.037 0.001 -124.391 0.734 112. 353 19.5 0.646 -152.152 2.956 166.632 0.002 -179.361 0.749 105.32 20 0.615 -159.364 4.024 144.714 0.001 -149.527 0.758 96.557 20.5 0.575 -170.057 5.629 117.504 0.003 128.822 0.768 83.26 21 0.507 176.378 7.582 83.068 0.003 31.487 0.722 66.609 21.5 0.391 162.789 9.193 43.644 0.003 -0.28 0.594 46.903 22 0.261 155.884 9.745 4.286 0.005 -62.166 0.443 32.49 22.5 0.159 154.434 9.774 -31.231 0.006 -116. 626 0.335 22.212 23 0.061 138 9.8 -65.287 0.005 -133.835 0.271 14.504 23.5 0.069 -28.823 9.68 -99.629 0.006 -179.986 0.25 0.269 24 0.215 -50.017 9.38 -134.977 0.009 142.261 0.245 -20.873 24.5 0.391 -74.64 8.613 -171.028 0.007 102.741 0.231 -49.912 25 0.495 -93.496 7.307 153.658 0.006 86.323 0.218 -82.78 25.5 0.556 -107.082 5.977 123.21 0.007 88.709 0.202 -104.641 26 0.576 -119. 686 4.92 96.402 0.005 65.418 0.192 -124.65 26.5 0.584 -128.704 4.172 70.47 0.004 54.436 0.186 -140.237 27 0.592 -135.713 3.604 47.365 0.003 16.612 0.159 -151.105 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd
may 2007 - rev 02-may-07 page 5 of 7 21.0-24.0 ghz gaas mmic power amplifier mechanical drawing units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all bond pads are 0.100 x 0.100 (0.004 x 0.004). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 3.647 mg. bias arrangement bond pad #1 (rf in) bond pad #2 (rf out) bond pad #3 (vd2) bond pad #4 (vg2) bond pad #5 (vd1) bond pad #6 (vg1) bypass capacitors - see app note [2] 1 3 4 5 1.310 (0.052) 0.719 (0.028) 0.0 0.0 0.718 (0.028) 3.258 (0.128) 4.490 (0.177) 6 2.858 (0.113) 1.028 (0.041) 0.628 (0.025) 2 rf out rf in vd1 1 3 4 5 6 2 vg1 10 vg2 10 vd2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd
may 2007 - rev 02-may-07 page 6 of 7 app note [1] b iasing - it is recommended to separately bias each stage at vd(1,2)=5.0v, id1=350ma, and id2=600ma. it is also recommended to use active biasing to keep the currents constant as the rf power and temperature vary; this gives the most reproducible results. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this is -0.3v. typically the gate is protected with silicon diodes to limit the applied voltage. also, make sure to seque nce the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] b ias arrangement - for parallel stage bias (recommended for general applications) -- the same as individual stage bias but all the drain or gate p ad dc bypass capacitors (~100-200 pf) can be combined. additional dc bypass capacitance (~0.01 uf) is also recommended to all dc or combination (if gate or drains are tied together) of dc bias pads. for individual stage bias (recommended for saturated applications) -- each dc pad (vd1,2 and vg1,2) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. 21.0-24.0 ghz gaas mmic power amplifier mttf table (tbd) b a c kplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature deg celsius deg celsius deg celsius fits e+ e+ e+ mttf hours e+ e+ e+ rth c/w c/w c/w b ias conditions: vd1=vd2=5.0v, id1=350 ma, id2=600 ma these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd
may 2007 - rev 02-may-07 velocium products 18 - 20 ghz hpa - aph478 page 7 of 7 21.0-24.0 ghz gaas mmic power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. p1010-bd handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas , powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support poli c y - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any compone nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die atta c hment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless g old- tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310oc +/- 10oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire b onding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering des c ription XP1010-BD-000V where ?v? is rohs compliant die packed in vacuum release gel paks xp1010-bd-000w where ?w? is rohs compliant die packed in waffle trays xp1010-bd-ev1 xp1010 die evaluation module
|
